Post thumbnail of Silicon nanoparticle is a new candidate for an ultrafast all-optical transistor
14 October 2015
Continue reading Silicon nanoparticle is a new candidate for an ultrafast all-optical transistor

Silicon nanoparticle is a new candidate for an ultrafast all-optical transistor

hysicists have experimentally demonstrated the feasibility of designing an optical analog of a transistor based on a single silicon nanoparticle. Because transistors are some of the most fundamental components of computing circuits, the results of the study have crucial importance for the development of optical computers, where transistors must be very small and ultrafast at the same time.

Post thumbnail of New 2D transistor material made using precision lasers: New technique for making 2D transistor from dual-phase TMD crystal
13 October 2015
Continue reading New 2D transistor material made using precision lasers: New technique for making 2D transistor from dual-phase TMD crystal

New 2D transistor material made using precision lasers: New technique for making 2D transistor from dual-phase TMD crystal

Molybdenum ditelluride (MoTe2) is a crystalline compound that if pure enough can be used as a transistor. Its molecular structure is an atomic sandwich made up of one molybdenum atom for every two tellurium atoms[HY1]. It was first made in the 1960’s via several different fabrication methods, but until last year it had never been made in a pure enough form to be suitable for electronics.

Post thumbnail of Taking transistors into a new dimension
12 October 2015
Continue reading Taking transistors into a new dimension

Taking transistors into a new dimension

A new breakthrough could push the limits of the miniaturization of electronic components further than previously thought possible. Researchers have built a nanometric transistor that displays exceptional properties for a device of its size. To achieve this result, the researchers developed a novel three-dimensional architecture consisting of a vertical nanowire array whose conductivity is controlled by a gate measuring only 14 nm in length.